MOCVD Product Gallery

Every TNSC MOCVD Tool installation is customized based on specific customer requirements. We are pleased to highlight three of our models here, followed by a table summarizing our current MOCVD Systems lineup.

In order to gain a fuller understanding of our equipment and services capabilities, we invite you to contact us, so that we can describe our systems’ technologies in the context of your specific production requirements.

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UR26K

GaN MOCVD system for high productivity of 8” wafers.

UR26 MOCVD tool

  UR26 chamber



Features: 

  • One of the largest capacity systems for 8” as single reactor
  • 1.5 times the productivity compared to the previous model
  • Simplified design to minimize downtime



Specifications: 

  • Reactor Type: Revolution and Rotation susceptor
  • Wafer Size: 6”x10, 8”x6
  • Loading/Unloading: Automated
  • Heating: 6-zone resistance heater
  • Application: Production
  • Wafer Face: Face up

 

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UR25K

GaN MOCVD system for high quality mass production of 4” and 6” wafers.

UR25MOCVD tool 

  UR25 Chamber



Features: 

  • Based on the quality and uniformity-proven reactor of the SR series with atmospheric pressure growth
  • Automated parts handling system for the highest productivity
  • Lowest cost of ownership by high-growth rate epitaxy
  • Highest throughput with the lowest downtime with Cl2 dry cleaning equipment



Specifications: 

  • Reactor Type: Revolution and Rotation susceptor
  • Wafer Size: 4”x10, 6”x7
  • Loading/Unloading: Automated
  • Heating: 6-zone resistance heater

 

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SR4000 Series

High Performance GaN MOCVD system for research, development, and production use. 

SR4000 MOCVD tool 

 SR4000 chamber



Features: 

  • Device applications: High-efficiency UV-LED, HEMT, HBT, etc.
  • Wide process window based on atmospheric pressure growth
  • Longer intervals between maintenance due to optimized gas flow inside the flow channel
  • Improved substrate heater properties (temperature uniformity, and heat response)
  • Reduced TAT from development to production
  • High temperature option (HT) and simple structure option for R&D (RR) are available



Specifications: 

  • Reactor Type: Horizontal rotary susceptor
  • Reactor Material: Stainless Steel
  • Wafer Size: 2”x3, 4”x1
  • Wafer Face: Face up
  • Transfer Tray Material: Quartz

 

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Also ask about our other TNSC MOCVD Systems 


GaAs, InP   

 

Model Type Wafer Face   Wafer Size Application
VR-3000 Vertical Face up 3"x 1 wafer Research
HR-3000 Horizontal Face up 3"x 1 wafer Research, Development
HR-4000 Horizontal Face up 2"x 3 wafers Development, Production
HR-6000 Horizontal Face down 2"x 6 or 3" x 3 wafers Development, Production
HR-8000 Horizontal Face down 3"x 6 or 2" x 18 or 4" x 4 wafers   Development, Production
HR-10000   Horizontal Face down 4"x 5 or 3" x 10 wafers Production
BMC Rotation & Revolution   Face down 2"x 42 ~ 6" x 6 wafers Production

 

GaN

Model Type Wafer Face   Wafer Size Application
SR-2000   Horizontal Face up 2"x 1 wafer Research
SR-4000 Horizontal Face up 2"x 3 or 4" x 1 wafers Development, Production
SR-6000 Horizontal Face up 2"x 6 or 3" x 3 or 6" x 1 wafers   Development, Production
UR25K Rotation & Revolution   Face up 4"x 11 or 6" x 7 wafers Production
UR26K Rotation & Revolution Face up 6"x 10 or 8" x 6 wafers Production

 

*In order to meet the specific requirements of your application, customized MOCVD system design and manufacturing is available upon request.

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